Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 19: Nitrides: Devices

HL 19.4: Vortrag

Montag, 31. März 2014, 15:45–16:00, POT 151

Al(Ga)N electron blocking heterostructure design for high injection efficient 290 nm light emitting diodes — •Martin Guttmann1, Christoph Reich1, Tim Kolbe1,2, Frank Mehnke1, Christian Kuhn1, Jens Rass1,2, Tim Wernicke1, Mickael Lapeyrade2, Sven Einfeldt2, and Michael Kneissl1,21Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

We report on the optical and electronic properties of AlGaN-based light emitting diodes (LEDs) with a wavelength near 290 nm using different electron blocking heterostructures. Using a conventional Al0.7Ga0.3N:Mg electron blocking layer (EBL) carrier injection into 290 nm LEDs proves to be challenging. A broad parasitic luminescence around 350 nm was observed, originating from electron overflow into the Mg-doped Al0.4Ga0.6N/Al0.3Ga0.7N superlattice. Our studies show that by inserting an AlN:Mg interlayer (IL) between active region and EBL, electron overflow can be prevented. This is confirmed by electroluminescence measurements and simulations. With increasing IL thickness the emission output power increases, reaches a maximum at 3 nm and remains constant for thicker IL. We present a detailed analysis of the electron and hole injection into 290 nm LEDs using simulations as well as a study of current-voltage-characteristics and the emission spectra obtained from temperature dependent and pulsed electroluminescence measurements.

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