Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 2: Topological insulators: mostly structure and electronic structure (with MA/O/TT)

HL 2.9: Vortrag

Montag, 31. März 2014, 11:45–12:00, POT 051

Scanning Tunneling Microscopy of Ultrathin Topological Insulator Sb2Te3 Films on Si(111) grown by Molecular Beam Epitaxy — •Martin Lanius, Jörn Kampmeier, Gregor Mussler, and Detlev Grützmacher — Peter Grünberg Institut, Forschungszentrum Jülich, Germany

Topological insulators (TIs) are a class of materials in the field of condensed matter physics. In addition to the fascinating electronic properties, the Van der Waals growth mode of TIs, i.e. the TI epilayer is only weakly bonded to the substrate, which allows the use of substrates with high lattice mismatch, is of high interest. In this case we have studied the nucleation and growth process of the TI Sb2Te3 on Si(111) substrates by STM (Scanning Tunneling Microscopy) and AFM (Atomic Force Microscopy). The thin films from several nanometers thickness down to one quintuple layer thickness have been grown by molecular beam epitaxy. To determine the thickness and composition of the films we used x-ray reflectivity and x-ray diffraction. Further investigations of Ge2Sb2Te3, which is a phase-changing material and a topological insulator, and the comparison to the growth mode of Sb2Te3 will be presented.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2014 > Dresden