Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 31: Poster: Nitrides
HL 31.6: Poster
Montag, 31. März 2014, 17:00–20:00, P2
GaInN/GaN multiple quantum well structures grown via plasma-assisted MBE — •Patricia Herbst, Christopher Hein, Andreas Kraus, Fedor Alexej Ketzer, Ronald Buss, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institute of Applied Physics, TU Braunschweig, Germany
The material system containing the group-III-nitrides takes an important role for optoelectronic devices, e.g. light-emitting diodes (LED). In particular, the promising features of GaInN/GaN multiple quantum wells (MQW) need further studies because the physical processes taking place are not fully understood. The growth of GaInN/GaN single layers as well as MQW was investigated using a RF-MBE (RIBER 32). Indium concentrations, surface morphologies, relaxation and layer thicknesses were analyzed in the growth temperature range from 470∘C up to 750∘C at different fluxes. Varying layer thicknesses (1-45nm) were analyzed revealing a correlation between indium concentration, relaxation and layer thickness. With increasing layer thickness InGaN relaxes and a higher indium concentration is detected. A five fold Ga0.89In0.11N/GaN MQW was realized emitting at 2.84 eV (15K). Superlattice fringes with pendellösungen appear in XRD measurements around the (0002)-Bragg reflection. The predicted In-concentration via XRD corresponds to the photoluminescence spectroscopy data. Even at 300K a quantum well emission could be observed corresponding to an internal quantum efficiency of 0.2%.