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Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Poster: Nitrides

Monday, March 31, 2014, 17:00–20:00, P2

  17:00 HL 31.1 The contribution has been withdrawn.
17:00 HL 31.2 The role of Si during the growth of GaN micro- and nanorods — •Christian Tessarek, Martin Heilmann, Christel Dieker, Erdmann spiecker, and Silke Christiansen
17:00 HL 31.3 Terahertz spectroscopy of electron transport in GaN — •Thomas Rene Arend, Stefan Gerhard Engelbrecht, Menno Johannes Kappers, and Roland Kersting
17:00 HL 31.4 Oxidative chemical vapor deposition of p-conductive polymers on ZnO and GaN — •Max Rückmann, Stephanie Bley, Florian Meierhofer, Jens Reinhold, Lutz Mädler, Jürgen Gutowski, and Tobias Voss
17:00 HL 31.5 Optical investigations of exciton-phonon coupling in GaInN quantum wells — •Manuela Klisch, Fedor Alexej Ketzer, Torsten Langer, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
17:00 HL 31.6 GaInN/GaN multiple quantum well structures grown via plasma-assisted MBE — •Patricia Herbst, Christopher Hein, Andreas Kraus, Fedor Alexej Ketzer, Ronald Buss, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
17:00 HL 31.7 RF-MBE growth of AlN on sapphire utilizing AlN nucleation layers — •Christopher Hein, Andreas Kraus, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
17:00 HL 31.8 Photoreflectance studies on InGaN/GaN multi-quantum well structures — •Stefan Freytag, Christoph Berger, Pavel Y. Bokov, Armin Dadgar, Rüdiger Goldhahn, Alois Krost, and Martin Feneberg
17:00 HL 31.9 Structural and luminescence properties of an AlInN/AlGaN based microcavity structure — •Max Trippel, Gordon Schmidt, Peter Veit, Frank Bertram, Christoph Berger, Armin Dadgar, Alois Krost, and Jürgen Christen
17:00 HL 31.10 MOVPE growth of group III-Nitrides on ruthenium coated silicon and sapphire substrates — •Silvio Neugebauer, Armin Dadgar, Jürgen Bläsing, Peter Veit, and Alois Krost
17:00 HL 31.11 Morphology and atomic structure of GaN surfaces and InGaN/GaN quantum wells — •Sabine Alamé, Andrea Navarro-Quezada, Daria Skuridina, Tim Wernicke, Michael Kneissl, Patrick Vogt, and Norbert Esser
17:00 HL 31.12 Analysis of semipolar gallium nitride layers by µ-Raman spectroscopy — •Lisa Hiller, Philipp Schustek, Matthias Hocker, Sebastian Bauer, Marian Caliebe, Tobias Meisch, Ferdinand Scholz, and Klaus Thonke
17:00 HL 31.13 Development of a dedicated low noise EBIC measurement system — •Manuel Knab, Matthias Hocker, Ingo Tischer, Junjun Wang, Ferdinand Scholz, and Klaus Thonke
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