Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 32: Poster: ZnO and its relatives

HL 32.8: Poster

Montag, 31. März 2014, 17:00–20:00, P2

Patterned growth of ZnO nanowires on the 10 µm to 200 nm scale — •Florian Huber1, Manfred Madel1, Julian Jakob1, Dominik Heinz2, Manuel Hartmann3, Alfred Plettl3, Ferdinand Scholz2, and Klaus Thonke11Institute of Quantum Matter / Semiconductor Physics Group, Ulm University — 2Institute of Optoelectronics, Ulm University — 3Institute of Solid State Physics, Ulm University

Two different approaches for the structured growth of ZnO nanowires via chemical vapour deposition (CVD) were realized. On the one hand GaN pyramids grown via metalorganic vapour phase epitaxy (MOVPE) were used to control the alignment of the nanowires. On the other hand several types of substrates were patterned using PS-lithography. Both methods show a very good alignment over wide ranges. The diameter of the nanowires could be controlled from 400 nm down to less than 100 nm. Furthermore different filling factors could be realized. An additional method for a controlled positioning of single nanowires via dielectrophoresis was established. This enables the investigation of the gas sensing behaviour of single nanowires with varying diameters via an optical readout in micro-photoluminescence measurements under different gas atmospheres.

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