Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 33: Optical properties I

HL 33.3: Vortrag

Dienstag, 1. April 2014, 10:00–10:15, POT 006

Study of the disorder effects in Ga(AsBi) single quantum wells — •Mohammad Khaled Shakfa1, Dimitri Kalincev1, Alexey Chernikov1, Sangam Chatterjee1, Xianfeng Lu2, Shane R. Johnson2, Dan A. Beaton3, Thomas Tiedje4, and Martin Koch11Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, United States — 3Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada — 4Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6, Canada

Ga(AsBi) semiconductor alloys have attracted increasing interest in recent years due to their special physical properties and potential application in optoelectronic and spintronic devices. These materials typically exhibit a certain degree of disorder due the potential fluctuation associated with the Bi content and to the existence of Bi clusters within the alloy structure. Here, we report on a study to clarify the impact of the Bi content on disorder effects in GaAsBi/GaAs SQWs [1]. The experimental techniques employed are continuous-wave and time resolved photoluminescence. Two theoretical models are used to quantify the disorder parameters. A straightforward model with a single energy scale is based on the carrier dynamics at very low temperatures. Secondly, an excitonic hopping model with two energy scales is based on the features of the PL spectra. [1] J. Appl. Phys. 114, 164306 (2013).

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