Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 49: Energy materials: Thermoelectrics

HL 49.3: Vortrag

Dienstag, 1. April 2014, 14:30–14:45, POT 051

Hybrid Si/AlOx thin films of the electron crystal-phonon glass type — •Markus Trutschel1,2, Jens Glenneberg2, Stefan Ebbinghaus2, Peter Werner1, and Hartmut S. Leipner21Max-Planck-Institut für Mikrostrukturphysik, Halle (Saale) — 2Martin-Luther-Universität, Halle (Saale)

Heat in modern integrated circuits is produced concentrated in small areas. Active cooling may enhance the performance of such devices. Materials for thermoelectric cooling require a high electrical conductivity and Seebeck coefficient together with a low thermal conductivity. Thus, suitable materials are those of the electron crystal-phonon glass type. Composites may provide nontoxic, cheap and available materials with a good thermoelectric performance to be integrated in silicon technology.

We studied structural, electrical and thermoelectric properties of silicon particles formed in an aluminum oxide matrix. The samples were synthesized by means of a physicochemical process. Thin films of aluminum were deposited on silicon oxide layers followed by a thermal annealing step in argon atmosphere. The silicon oxide was reduced to silicon during the heat treatment, whereas the aluminum was oxidized. For annealing temperatures between 540C and 600C, the size, shape and distribution of the silicon particles formed was found to be interesting for technical applications. We present the structural characterization of hybrid Si/AlOx films along with the results of the electrical and thermoelectric properties.

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