Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: Organic semiconductors: Transistors and OLEDs (with CPP/DS)

HL 50.2: Vortrag

Dienstag, 1. April 2014, 14:15–14:30, POT 081

Light-induced switching mechanism of porphyrin-coated Si nanowire field effect transistors — •Eunhye Baek1, Sebastian Pregl1,2, Mehrdad Shaygan3, Lotta Röhmhildt1, Dmitry Ryndyk1,2, Larysa Baraban1, and Gianaurelio Cuniberti1,21Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, Germany — 2Center for Advancing Electronics Dresden, TU Dresden, Germany — 3Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, Korea

We present light-induced switching mechanism of porphyrin-coated Si nanowire field effect transistors (Si NW FETs). Si NW FETs were fabricated by bottom-up methods and show ambipolar characteristics due to thermally annealed Schottky barrier on the contact between the electrode and NW channel. Si NW FETs are functionalized by porphyrin, a key dye molecule in photosynthetic process, to have photo-sensitive operation. Porphyrin-coated devices show clear current switching under light illumination that is not shown in bare devices. Switching time and switching current ratio depend on the concentration of porphyrin. Under light irradiation, electrical properties of molecular layer are changed; increased mobile charges by photo-excitation screen electrical field from the applied bias. In addition, molecules are polarized by charge separation that build vertical field towards the NWs. The electrical charge of porphyrin layer modifies the total applied field in NW, which induces current switching according to the concentration of porphyrin.

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