Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 53: Nitrides: Preparation of nonpolar and semipolar orientations
HL 53.6: Vortrag
Dienstag, 1. April 2014, 15:15–15:30, POT 151
Optical and structural nano-characterization of GaN based LED structures with semipolar sub-µ m patterned InGaN QWs — •Sebastian Metzner1, Marcus Müller1, Gordon Schmidt1, Benjamin Max1, Peter Veit1, Silke Petzold1, Frank Bertram1, Robert Leute2, Dominik Heinz2, Junjun Wang2, Ferdinand Scholz2, and Jürgen Christen1 — 1Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg — 2Institute of Optoelectronics, University of Ulm
We present the nano-scale correlation of optical and structural properties of an LED structure with sub-µ m semipolar InGaN quantum wells (QWs) using liquid helium temperature scanning (transmission) electron microscope cathodoluminescence (SEM/STEM-CL). The semipolar n-doped GaN structures were selectively grown on a SiN mask consisting of stripes with a period of 260 nm on top of a c-plane GaN/sapphire template using metalorganic vapour phase epitaxy. The {1011} side facets were subsequently covered by InGaN and finally completely filled up and planarized by p-doped GaN. The InGaN QWs on top of the {1011} GaN stripes are clearly resolvable in cross-section STEM images in high-angle annular dark field contrast and can directly be correlated to intense CL emitting at ∼ 440 nm. We will discuss the impact of e.g. systematic thickness changes of the QW on the luminescence properties as well as the effect of the mask patterning process and selective growth on the planarization during p-doped GaN growth.