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Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 53: Nitrides: Preparation of nonpolar and semipolar orientations

Tuesday, April 1, 2014, 14:00–16:15, POT 151

14:00 HL 53.1 Analytic solutions of kp-Hamiltonian for III-nitride semicondutors with arbitrary strain situation — •Michael Winkler, Rüdiger Goldhahn, and Martin Feneberg
14:15 HL 53.2 The impact of silicon doping on the optical properties of the stacking fault emission in a-plane GaN — •Gordon Schmidt, Christopher Karbaum, Sebastian Metzner, Frank Bertram, Peter Veit, Matthias Wieneke, Hartmut Witte, Armin Dadgar, Martin Feneberg, Rüdiger Goldhahn, Alois Krost, and Jürgen Christen
14:30 HL 53.3 In-situ analysis of the surface electronic properties of polar and nonpolar InN and GaN films — •Marcel Himmerlich, Anja Eisenhardt, and Stefan Krischok
14:45 HL 53.4 Luminescence characteristics of pyramidal InGaN/GaN light emitter — •Jan Wagner, Michael Jetter, and Peter Michler
15:00 HL 53.5 Determination of polarisation fields in group III-nitride heterostructures by capacitance-voltage-measurements — •Monir Rychetsky, Ingrid Koslow, Jens Rass, Tim Wernicke, Konrad Bellmann, Veit Hoffmann, and Michael Kneissl
15:15 HL 53.6 Optical and structural nano-characterization of GaN based LED structures with semipolar sub-µ m patterned InGaN QWs — •Sebastian Metzner, Marcus Müller, Gordon Schmidt, Benjamin Max, Peter Veit, Silke Petzold, Frank Bertram, Robert Leute, Dominik Heinz, Junjun Wang, Ferdinand Scholz, and Jürgen Christen
15:30 HL 53.7 Cathodoluminescence mapping on differently inclined semipolar InGaN facets — •Matthias Hocker, Ingo Tischer, Benjamin Neuschl, Jeffrey Helbing, Junjun Wang, Ferdinand Scholz, and Klaus Thonke
15:45 HL 53.8 Generalized ellipsometry of semipolar AlGaN — •Juliane Klamser, Martin Feneberg, Rüdiger Goldhahn, Joachim Stellmach, Martin Frentrup, Simon Ploch, Frank Mehnke, Tim Wernicke, and Michael Kneissl
16:00 HL 53.9 Direct identification of luminescence from I1 type basal plane stacking faults in semipolar AlGaN layer with low Al content — •Ingo Tischer, Manuel Frey, Matthias Hocker, Robert A.R. Leute, Ferdinand Scholz, Heiko Groiss, Erich Müller, Dagmar Gerthsen, Willem van Mierlo, Johannes Biskupek, Ute Kaiser, and Klaus Thonke
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