Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 65: Devices

HL 65.1: Vortrag

Mittwoch, 2. April 2014, 11:30–11:45, POT 151

Influence of Charge Trapping on Memory Characteristics of Si:HfO2-Based Ferroelectric Field Effect Transistors — •Milan Pešić1, Stefan Mueller1, Stefan Slesazeck1, Alban Zaka2, Tom Herrmann2, Ekaterina Yurchuk1, Uwe Schröder1, and Thomas Mikolajick11NaMLab gGmbH / * IHM TU Dresden, Dresden, Germany — 2GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany

The Ferroelectric field effect transistors (FeFET) devices have never reached maturity due to limited scalability, low retention and CMOS incompatibility. Only recently, these obstacles seem to have been resolved by the discovery of ferroelectric properties in silicon doped hafnium dioxide (Si:HfO2). This concept proven that possess the potential of realizing highly-scaled ultra low-power memory cells.

One of the main challenges in Si:HfO2 FeFET implementation is the memory window degradation caused by charge trapping effects. In order to analyze the interplay between ferroelectric switching and parasitic charge trapping, a FeFET model including nonlocal tunneling, charge trapping and ferroelectric switching effects was implemented in TCAD Sentaurus Device.

The charge trapping model was qualitatively calibrated based on electrical characterization of Si:HfO2-FeFETs fabricated on a 28 nm bulk technology. From the characterization results, simulation parameters were extracted. In our study we present how bulk traps inside the ferroelectric (Si:HfO2) as well as interface traps at the SiO2 / silicon bulk substrate interfere with the ferroelectric memory characteristics.

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