Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 65: Devices

HL 65.4: Vortrag

Mittwoch, 2. April 2014, 12:15–12:30, POT 151

Subnanosecond relaxation of free carriers in compensated n- and p-type germanium — •Nils Deßmann¹, Sergey Pavlov², Valery Shastin³, Roman Zhukavin³, Veniamin Tsyplenkov³, Stephan Winnerl⁴, Martin Mittendorff⁵, Nikolai Abrosimov⁶, Helge Riemann⁶, and Heinz-Wilhelm Hübers^1,2 — ¹Technische Universität Berlin, Berlin, Deutschland — ²Deutsches Zentrum für Luft- und Raumfahrt, Berlin, Deutschland — ³Institute for Physics of Microstructures, Nizhny Novgorod, Russland — ⁴Helmholtz-Zentrum Dresden-Rossendorf, Dresden-Rossendorf, Deutschland — ⁵Technische Universität Dresden, Dresden, Deutschland — ⁶Leibniz-Institut für Kristallzüchtung, Berlin, Deutschland

The relaxation of free holes and electrons in highly compensated germanium doped with gallium (p-Ge:Ga:Sb) and antimony (n-Ge:Sb:Ga) has been studied by a pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. The relaxation times vary between 20 ps and 300 ps and depend on the incident THz intensity and compensation level. The relaxation times are about five times shorter than previously obtained for uncompensated n-Ge:Sb and p-Ge:Ga. The results support the development of fast photoconductive detectors in the THz frequency range.