Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 65: Devices
HL 65.5: Vortrag
Mittwoch, 2. April 2014, 12:30–12:45, POT 151
Nickel-related defects and their interaction with H in n- and p-type Si. — •Leopold Scheffler1, Vladimir Kolkovsky1, Philipp Saring2, and Jörg Weber1 — 1Technische Universität Dresden, 01069 Dresden, Germany — 2Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
In the present study we focus our attention on Ni-related defects in n- and p-type Si and investigate their interaction with H. Previously, three dominant deep level transient spectroscopy (DLTS) peaks with the activation energies of EC-0.08 eV (E45), EC-0.4 eV (E230) and EV+0.17 eV (H80) were assigned to the double acceptor, single acceptor and single donor states of substitutional Ni. [1,2] However, in our study the concentration profiles of E45 and E230 were found to be different both in samples with a nickel concentration of NNi ~ 1x1013cm-3 and NNi ~ 6x1013cm-3 as determined from E230. This observation suggests a different origin of the dominant DLTS peaks in Ni-doped Si. After wet chemical etching or a dc H plasma treatment a number of additional minor peaks appear in the DLTS spectra. We will show that these peaks are correlated with H and some of them could be assigned to NiH-related complexes. The origin of these defects will be discussed.
[1] M. Shiraishi, J.-U. Sachse, H. Lemke, and J. Weber, Mater. Sci. Eng. B 58, 130 (1999)
[2] H. Kitagawa and H. Nakashima, Jpn. J. Appl. Phys. 28, 305 (1989)