Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 65: Devices
HL 65.7: Vortrag
Mittwoch, 2. April 2014, 13:00–13:15, POT 151
The consecutive photoresponse performance of porous silicon carbide ultraviolet photodetectors — •Nima Naderi1,2 and Md Roslan Hashim2 — 1Division of Semiconductors, Materials and Energy Research Center, Karaj, Iran — 2Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, Penang, Malaysia
This work reports on improvement in the optical and electrical properties of ultraviolet (UV) photodetectors based on porous silicon carbide (PSC). Porous samples were prepared through the optimization of the current density in the UV-assisted electrochemical etching of n-type silicon carbide (SiC) substrates. The current density can be considered an important parameter in controlling the etching rate and morphology of the porous samples. Thus, it can be used to enhance the optical properties of electrochemically etched PSC layers. Therefore, the electrical properties of PSC-based photodetectors such as response time and recovery time can be controlled by optimization of current density in the photoelectrochemical etching of SiC substrate.