Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 68: Heterostructures and interfaces

HL 68.3: Vortrag

Mittwoch, 2. April 2014, 15:30–15:45, POT 051

An XPS study on AlxGa1-xN/metal oxide hetero interfaces with ZnO and CuOx, respectively — •Benedikt Kramm, André Portz, Philipp Hering, Achim Kronenberger, Angelika Polity, and Bruno K. Meyer — 1. Physikalisches Institut, Justus Liebig Universität, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

For semi-conductor devices the energy band alignment of hetero junctions is one of the crucial factors which deliver a judgment for a successful operating electronic device. For our research on the nitride-oxide hetero interface we fabricated various hetero junctions based on n-type aluminum gallium nitride alloys (with 7%, 11% and 15% aluminum content) plus pure n-type and p-type gallium nitride. Copper oxide and zinc oxide were on top, respectively. The nitrides were epitaxial grown on sapphire substrates whereas the oxide top layers were deposited by RF-magnetron sputtering as 50 nm thick poly crystalline thin films. To get knowledge of the energetic behavior, like the band offsets of the valence and conduction band, charging effects as well as diffusion and the shape of the oxy-nitrogen mixed interface we performed X-ray photoelectron spectroscopy. A special focus was on the naturally build oxygen overlayer on gallium nitride which is typically a few angstroms thick and how it affects the hetero interface. Furthermore we evaluated the shifting of the photoelectron signals due to the preferential sputtering effect during depth-profiling with argon-ion bombardment.

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