Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 81: Poster: Energy materials incl. photovoltaics

HL 81.11: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Drive Level Capacitance Profiling on CIGS-based Thin Film Solar Cells — •Lisa Paller1,2, Felix Daume1,2, Andreas Rahm1, and Marius Grundmann21Solarion AG, Leipzig (Zwenkau) — 2Institut für Experimentelle Physik II, Universität Leipzig

For the efficient conversion of solar energy into electrical energy, a high density of mobile charge carriers within the solar cell device is required. The density of defects and their energetic position within the band gap play a decisive role in the generation of such electron hole pairs. These defect properties have been studied on CuIn1−xGaxSe2- based thin film solar cells by means of drive level capacitance profiling (DLCP). The variation of the sample temperature and the frequency of the applied AC voltage during DLCP allowed an estimation of the ionization energy of the defects.

We compare DLCP and the strongly related capacitance voltage profiling (CV) in order to point out advantages and disadvantages of both techniques. In the literature an overestimation of the carrier densities acquired via CV-measurements is reported . In order to verify the meaning of these results for our samples, CV measurements have been performed and the resulting doping profiles have been compared to the ones obtained from DLCP. In addition to high efficiencies a large lifetime of the solar cell devices is desirable. Therefore the samples have been artificially aged by a damp heat treatment and the defect properties have been investigated again via the two aforementioned capacitance profiling techniques.

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