Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 83: Poster: Graphene (with MA/O)

HL 83.11: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Gate-controlled STM study of magnetic impurities on a graphene surface — •Paul Punke1, Christian Dette1, Roberto Urcuyo1, Christopher Kley1, Sören Krotzky1, Rico Gutzler1, Marko Burghard1, Soon Jung Jung1, and Klaus Kern1,21Max-Planck-Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany — 2Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Graphene has been regarded as an ideal material for post silicon electronic application due to its unique electronic properties. To realize a field effect transistor for logic applications out of graphene, there has been a lot of effort to understand the gating effect on the charge-carrier-density-dependent properties of graphene, such as electronic scattering, spin based phenomena and collective excitations. We have designed a gatable low temperature scanning tunneling microscope (STM) by adding contacts to the sample holder. To prepare the gate-tunable graphene devices, we use graphene grown by chemical vapor deposition (CVD), transferred with or without a supporting layer of polymethylmethacrylate (PMMA) or polystyrene (PS), on an insulating layer of SiO2 or hexagonal boron nitride (h-BN) on SiO2. We also grow the graphene on h-BN directly on Ni substrate by CVD method. The quality of these samples will be compared by means of optical microscopy, atomic force microscopy (AFM), Raman spectroscopy and STM. Finally, we will present the gate-controlled electronic structure of graphene.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2014 > Dresden