Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 89: Metamorphic structures: Bringing together incompatible materials I (Focus session with DF)

HL 89.10: Vortrag

Donnerstag, 3. April 2014, 12:45–13:00, POT 251

Metamorphic growth of UV-B LEDs on Al0.5Ga0.5N on AlN/Sapphire by MOVPE — •Johannes Enslin1, Frank Mehnke1, Martin Guttmann1, Christoph Reich1, Jens Rass1,2, Tim Wernicke1, and Michael Kneissl1,21Technische Univerät Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

For AlGaN-based LEDs emitting in the UV-B spectral region between 280 nm and 320 nm relaxed buffer layers enable pseudomorphic growth of the multiple quantum well active region. In our contribution we present a study of the effects of various superlattice designs on pseudomorphic growth. The superlattice consists of 80 periods of AlN and GaN layers. We found that the thickness of the GaN layer and the relative AlN to GaN layer thicknesses (i.e. AlN/GaN ratio) are crucial for the relaxation process. 4.5 µm thick Al0.5Ga0.5N with an AlN/GaN ratio of one exhibits high densities of pits and cracks. LEDs grown on this layer show no luminescence most likely due to these defects. UV-B LEDs grown on templates with AlN/GaN ratios ≤ 0.4 exhibit fewer pits and no cracks, but show only poor luminescence. A smooth morphology was obtained for GaN thicknesses ≤ 2 nm and AlN/GaN ratios between 0.4 and 0.8. XRD scans show a distinct superlattice reflection. Reduced densities of pits and cracks indicate metamorphic growth. The optical emission power obtained from 305 nm LEDs grown on those layers reaches values up to 2.3 mW at 60 mA.

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