Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 89: Metamorphic structures: Bringing together incompatible materials I (Focus session with DF)

HL 89.2: Topical Talk

Donnerstag, 3. April 2014, 10:00–10:30, POT 251

Two types of buffer layer for the growth of GaN on highly lattice mismatched substrates and their impact on the development of sustainable systemsTadashi Mitsunari1, Koji Okuno1, Yoshio Honda1, Shigeyasu Tanaka2, and •Hiroshi Amano1,31Department of Electrical Engineering and Computer Science, Nagoya University — 2EcoTopia Science Institute, Nagoya University — 3Akasaki Research Center, Nagoya University

There are two types of buffer layer for the growth of commercially available GaN-based blue LEDs on a sapphire substrate. One is the low-temperature deposited AlN or GaN buffer layer and the other is the sputter-deposited AlN buffer layer. In both cases, deposition condition, thickness and the annealing condition are critical for the fabrication of high performance blue LEDs. In this presentation, detailed study on the deposition and growth process of the low-temperature deposited AlN buffer layer and the following GaN growth will be discussed. We applied the sputter-deposited AlN buffer layer for the growth of GaN on Si. Details of the quality of GaN on a sputter-deposited AlN layer will be shown.

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