Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 98: Graphene: Spintronics, transistors, and sensors (with DY/MA/O/TT)

HL 98.5: Vortrag

Donnerstag, 3. April 2014, 16:00–16:15, POT 081

Novel fabrication method of lateral spin valve devices based on graphene on hexagonal boron nitrideMarc Drögeler1, Frank Volmer1, •Maik Wolter1, Bernat Terrés1, Kenji Watanabe3, Takashi Taniguchi3, Gernot Güntherodt1, Christoph Stampfer1,2, and Bernd Beschoten112nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany, EU — 2Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich, Germany, EU — 3National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Despite tremendous efforts in improving graphene-based spin transport devices the measured spin lifetimes are still orders of magnitude less than theoretically predicted. Contact-induced spin dephasing has recently been identified as the bottleneck for spin transport through Co/MgO spin injection and detection electrodes. It can, however, significantly be suppressed for devices with large contact resistance area products [1]. Simultaneously, a strong reduction of the charge carrier mobility is usually observed. We present a new method to fabricate graphene-based non-local spin valves on hexagonal boron nitride yielding spin lifetimes above 3 ns, spin diffusion length above 10 µm and large charge carrier mobilities above 30.000 cm2/Vs.

[1] F. Volmer et al., Phys. Rev. B 88, 161405(R) (2013).

This work has been supported by DFG through FOR 912 and by

EU through Graphene Flagship.

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