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KR: Fachgruppe Kristallographie

KR 12: Functional Materials - Analysis with EBSD, X-Ray Kossel Diffraction and Related Methods (MI jointly with KR)

KR 12.4: Vortrag

Donnerstag, 3. April 2014, 10:30–10:45, MER 02

Simulation of phase propagation delay for modulated EBIC in thin Silicon samples — •Markus Holla, Markus Ratzke, Winfried Seifert, and Martin Kittler — Joint Lab IHP/BTU, BTU Cottbus, Konrad-Wachsmann-Allee 1, 03046 Cottbus, Germany

Calculations of locally induced currents by a modulated electron beam are presented for thin Silicon samples with Schottky contacts. The theoretic electron beam current (EBIC) amplitudes and phase shifts are analyzed to estimate the influence of semiconductor parameters (such as surface recombination velocity, diffusion length and diffusion coefficient). The parameter identification limits for the method are discussed. Among other results it was found, that the phase shift correlates with the diffusion coefficient. The surface layer interaction and the resulting effective diffusion length behavior are presented, too.