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MA: Fachverband Magnetismus

MA 28: Magnetic Materials I

MA 28.8: Vortrag

Mittwoch, 2. April 2014, 17:00–17:15, HSZ 04

The effect of strain on the orbital occupation of Mn atoms in thin films of La1−xSr1+xMnO4Mehran Vafaee1, •Philipp Komissinskiy1, Roberto Kraus2, Valentina Bisogni2, Mehrdad Baghaie Yazdi1, Jochen Geck2, and Lambert Alff11Institute for Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany — 2Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, D-01171 Dresden, Germany

We have investigated the correlation between orbital and lattice degrees of freedom in thin films of single-layered insulating antiferromagnet La1−xSr1+xMnO4 (x = 0.0, 0.5) using linear polarized X-ray absorption spectroscopy at Mn L2,3-edges. Lattice parameters of the La1−xSr1+xMnO4 films are controlled by in-plane compressive and tensile strain induced via their epitaxial growth on LaSrAlO4 and NdGaO3 substrates, respectively [1]. Positive sign of the linear dichroism measured for the films with x = 0.0 indicates the preferential out-of-plane d3z2r2 orbital occupation for Mn3+ cations. Occupation of the in-plane-oriented orbitals in the films with x = 0.0 may be possible at the tensile strain larger than 1.9 % used in our experiments. Tetragonal lattice distortions in the strained LSMO films with x = 0.5 promote preferential occupation of the out-of-plane-oriented Mn orbitals instead of the d3x2r2 and d3y2r2 in-plane-oriented ones previously reported for La1−xSr1+xMnO4 single crystals with similar doping level.
M. Vafaee, M. Baghaie Yazdi, A. Radetinac, G. Cherkashinin, P. Komissinskiy, and L. Alff, J. Appl. Phys. 113, 053906 (2013).

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