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MA: Fachverband Magnetismus
MA 42: Magnetic Materials III
MA 42.7: Vortrag
Donnerstag, 3. April 2014, 16:45–17:00, HSZ 04
Small damping parameters in Co2FeSi and Fe2CoSi films — •Christian Sterwerf1, Markus Meinert1, Jan-Michael Schmalhorst1, Behrouz Khodadadi2, Soumalya Paul2, Matthias Buchmeier2, Claudia Mewes2, Tim Mewes2, and Günter Reiss1 — 1Thin Films and Physics of Nanostructures, Department of Physics, Bielefeld University, 33501 Bielefeld, Germany — 2Department of Physics and Astronomy/MINT Center, University of Alabama, Tuscaloosa, Alabama 35487, USA
Co and Fe based Heusler compounds are promising candidates for spintronic devices as they offer high Curie temperatues and high spin polarizations.
In an earlier publication we presented sputtered Co2−xFe1+xSi (0 ≤ x ≤ 1) films with good crystalline ordering and high tunnel magnetoresistance (TMR) ratios in magnetic tunnel junctions (MTJs) with a Co2−xFe1+xSi electrode. [1]
Magnetization relaxation and the anisotropy of the films were determined by broadband ferromagnetic resonance (FMR) and magnetooptical Kerr effect (MOKE) measurements. With the help of a broadband FMR and the consideration of the extrinsic linewidth, very small damping parameters were found. The damping parameter for Co2FeSi is 0.002.
[1] Sterwerf, Christian, et al. "High TMR Ratio in Co2FeSi and Fe2CoSi based Magnetic Tunnel Junctions." IEEE Transactions on Magnetics 49.7 (2013): 4386.