Dresden 2014 – wissenschaftliches Programm
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MI: Fachverband Mikrosonden
MI 5: Ion Beam Methods
MI 5.3: Vortrag
Mittwoch, 2. April 2014, 10:30–10:45, MER 02
Depth Profiling of OLED Materials by Cluster Ion Beams. — •Andrey Lyapin1, John S. Hammond2, Sankar N. Raman2, Scott R. Bryan2, Nicholas C. Erickson3, and Russell J. Holmes3 — 1Physical Electronics GmbH, Fraunhoferstr. 4, D-85737, Ismaning, Germany — 2Physical Electronics, 18725 Lake Drive East, Chanhassen, MN, 55317, USA — 3University of Minnesota, Minneapolis, MN, 55455, USA
The improvements in the efficiencies for OLED structures have recently focused on the incorporation of more effective organic materials and the development of novel structures for arranging these organic materials. Multi-layer devices, graded composition devices and novel electrical contact layers to the organic materials are all being rapidly developed. The need for analytical techniques to elucidate the organic thin film structures as a function of device fabrication and lifetime studies is becoming extremely important. The past few years have witnessed a paradigm shift in the use of cluster ion beams for the sputter depth profiling of organic materials in conjunction with the surface analysis techniques. Today the use of low-energy monatomic ion beams such as Ar+ for depth profiling of a wide range of organic materials, including multi-layer organic thin films and organic light emitting diodes (OLEDs) has been replaced with cluster ions such as C60+ and Ar gas cluster ion beams (GCIB). The presentation will illustrated the capability to provide quantitative compositional depth profiling of OLEDs from the XPS depth profile analysis of graded composition multilayer OLED films.