Dresden 2014 – scientific programme
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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates
O 17.5: Talk
Monday, March 31, 2014, 17:00–17:15, PHY C 213
Switching single molecules by STM voltage pulses on the Si(100) surface — •Anja Nickel1, Jörg Meyer1, Robin Ohmann1, Christian Joachim2, Gianaurelio Cuniberti1, and Francesca Moresco1 — 1Institute for Materials Science and Max Bergmann Center of Biomaterials, Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany — 2CNRS, CEMES, 29 rue J. Marvig, 31055 Toulouse, France
For the development of electronics down to atomic scale, it is of fundamental importance to build atomic-size interconnections in a planar geometry and to be able to controllably switch between different connection paths. Dangling bond wires build on the H:Si(100) are presently intensively investigated as promising candidates to build such interconnections. In this frame, we have investigated by scanning tunneling microscopy (STM) at low temperature Acetylbiphenyl molecules on the Si(100) surface. STM images show that the molecules adsorb along the dangling bond rows of the silicon. By applying voltage pulses with the STM tip, we demonstrate that single Acetylbiphenyl molecules can be reversibly switched between two different configurations. The experiment shows that Acetylbiphenyl is a suitable molecule to be used as molecular latch on a dangling bond based atomic scale circuit.