Dresden 2014 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 17: Semiconductor Substrates

Montag, 31. März 2014, 16:00–19:15, PHY C 213

16:00 O 17.1 Structural sensitivity of the electromechanical coupling at Si surfaces — •Sandra Hoppe, Anja Michl, Jörg Weissmüller, and Stefan Müller
16:15 O 17.2 Simultaneous nc-AFM/STM characterization of subsurface defects on B:Si(111)-√3x√3 surface — •Evan Spadafora, Jan Berger, Pingo Mutombo, Mykola Telychko, Martin Ondracek, Martin Svec, Zsolt Majzik, Alastair Mc Lean, and Pavel Jelinek
16:30 O 17.3 In situ Scanning Tunneling Microscopy investigation of layered superlattices [(VSe2)n]1.06[(TaSe2)n] — •Pavel Shukrynau, Ryan Atkins, Dave C. Johnson, and Michael Hietschold
16:45 O 17.4 Adsorption of Tetrahydrofuran and Diethylether on the Si(001) surface studied by means of STM, XPS and UPS — •Marcel Reutzel, Gerson Mette, Michael Dürr, Ulrich Koert, and Ulrich Höfer
17:00 O 17.5 Switching single molecules by STM voltage pulses on the Si(100) surface — •Anja Nickel, Jörg Meyer, Robin Ohmann, Christian Joachim, Gianaurelio Cuniberti, and Francesca Moresco
17:15 O 17.6 Initial-stage oxidation products on Si(111)-(7x7) in AFM and STMJo Onoda, •Martin Ondracek, Ayhan Yurtsever, Pavel Jelinek, and Yoshiaki Sugimoto
17:30 O 17.7 In situ study of water adsorption on InP(100) surfaces — •Matthias M. May, Hans-Joachim Lewerenz, and Thomas Hannappel
17:45 O 17.8 Frustrated self-assembly of shape-persistent star molecules on HOPG — •Stefan-S. Jester, Eva Sigmund, Lisa M. Röck, and Sigurd Höger
18:00 O 17.9 Ultra-thin ZnO on Metal Substrates as ZnO Surface Model — •Bjoern Bieniek, Oliver T. Hofmann, Patrick Rinke, and Matthias Scheffler
18:15 O 17.10 A photoelectron diffraction study of the Fe/GaAs(4x2)-interface — •Dominique Handschak, Frank Schönbohm, Tobias Lühr, Christoph Keutner, Ulf Berges, and Carsten Westphal
18:30 O 17.11 Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state — •M. Vyshnepolsky, C. Klein, A. Hanisch-Blicharski, and M. Horn-von Hoegen
18:45 O 17.12 STM study of thin terbium-silicide layers on Si(111) — •Martin Franz, Robert Kohlhaas, and Mario Dähne
19:00 O 17.13 Surface characterization of arsenic terminated Si(111) substrates pre-pared in MOVPE for III-V nanowire solar cells — •Weihong Zhao, Agnieszka Paszuk, Matthias Steidl, Sebastian Brückner, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, and Thomas Hannappel
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