Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates
O 17.12: Vortrag
Montag, 31. März 2014, 18:45–19:00, PHY C 213
STM study of thin terbium-silicide layers on Si(111) — •Martin Franz, Robert Kohlhaas, and Mario Dähne — Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany
The growth of rare earth silicides on silicon surfaces leads to the formation of very interesting structures such as self-organized metallic nanowires on the Si(001) and the Si(557) surface [1]. On Si(111), the formation of nanoclusters is observed at very low coverages [2], while at higher coverages two- and three-dimensional layers form [3].
In this work the growth and the atomic structure of Tb silicide films on Si(111) in the coverage regime from submonolayers to several monolayers were studied using scanning tunneling microscopy. In this regime various superstructures were identified. At submonolayer coverages first nanoclusters form before a 2√3×2√3 superstructure is observed. For Tb coverages exceeding 0.5 ML the 1×1 superstructure of the TbSi2 monolayer appears additionally, and at coverages exceeding one monolayer the three-dimensional Tb3Si5-multilayer is observed. Furthermore, elongated islands showing a 2×1 reconstruction on top are found.
This work was supported by the DFG through FOR 1282 project D.
[1] M. Dähne and M. Wanke, J. Phys.: Condens. Matter 25, 014012 (2013).
[2] M. Franz et al., Surf. Sci. 609, 215 (2013).
[3] I. Engelhardt et al., Surf. Sci. 600, 755 (2006).