Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates
O 17.4: Vortrag
Montag, 31. März 2014, 16:45–17:00, PHY C 213
Adsorption of Tetrahydrofuran and Diethylether on the Si(001) surface studied by means of STM, XPS and UPS — •Marcel Reutzel1, Gerson Mette1, Michael Dürr1,2, Ulrich Koert3, and Ulrich Höfer1 — 1Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, D-35032 Marburg — 2Institut für Angewandte Physik, Justus-Liebig-Universität Giessen, D-35392 Giessen, Germany — 3Fachbereich Chemie, Philipps-Universität,D-35032 Marburg
A promising possibility to compete with the challenges of miniaturization in semiconductor device physics is the functionalization of inorganic semiconductor surfaces with organic molecules. It is thus important to understand the basic adsorption mechanisms of different classes of organic molecules. In this contribution, we investigate the adsorption properties of tetrahydrofuran and diethylether on the Si(001) surface as representatives for the functional group of ethers. We find a complex adsorption scheme which is similar for the two molecules.
At 50 K, a dative bond is formed via the donation of electron density of an oxygen lone pair into the Ddown orbital of the c(4x2) reconstructed Si(001) surface. Heating the sample to 300 K leads to a surface mediated ether cleavage which results in covalently bonded adsorbates on two neighboring dimer rows. While the ring opening reaction of tetrahydrofuran leads to a bridging Si-O-(CH2)4-Si configuration, the linear diethylether is cleaved and leads to Si-O-C2H5 and Si-C2H5 adsorbates. The scission of diethylether further enables a tip induced intrarow hopping of the (-C2H5) fragment.