# Dresden 2014 – wissenschaftliches Programm

## Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

# O: Fachverband Oberflächenphysik

## O 35: Transport: Topological Insulators I (TT jointly with O)

### O 35.6: Vortrag

### Dienstag, 1. April 2014, 15:15–15:30, HSZ 304

**Josephson Effect in Topological Insulator Planar, Nanostep and Edge Junctions** — •Jennifer Nussbaum, Rakesh Tiwari, Thomas Schmidt, and Christoph Bruder — University of Basel, Switzerland

Topological insulators are states of quantum matter which are characterized by a full insulating gap in the bulk and gapless surface states which are protected by time-reversal symmetry. By using the superconducting proximity effect on a Bi_{2}Se_{3} topological insulator, a topological superconductor - topological insulator - topological superconductor (SIS) junction can be engineered. By solving the Dirac-Bogoliubov-De-Gennes equation in such a junction the maximal supercurrent that can flow through the surface of the Bi_{2}Se_{3} topological insulator with heavily doped superconducting electrodes is calculated. In this manner, short and wide nanostep Josephson junctions involving different side surfaces of the 3D topological insulator are investigated. The results are compared to the Josephson response of a junction involving only one side surface. The comparison reveals, for example, that a step setup leads to a non-trivial scaling of the Josephson current.