Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.27: Poster
Dienstag, 1. April 2014, 18:30–22:00, P2
Towards superlens-based infrared near-field nanospectroscopy: imaging dielectric contrasts with λ/30-resolution — •Peining Li1, Tao Wang1, Benedikt Hauer1, Gennady Shvets2, and Thomas Taubner1 — 1I. Institute of Physics (IA), RWTH Aachen University, Aachen 52056, Germany — 2Department of Physics and Center for Nano and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712, USA
Near-field superlenses present great capabilities for overcoming the diffraction limit [1], bringing new applications in optical lithography [2] and near-field imaging [3]. Here, using the combination of a silicon carbide superlens and scatting-scanning near-field optical microscopy (SL-SNOM), the infrared imaging of dielectric contrasts with a resolution of down to λ/30 (about 350 nanometers) has been verified. This achieved resolution is an almost 2-fold improvement compared to state-of-the-art superlens results [3]. From quantifications of the superlens dispersion via near-field mapping of surface phonon polaritons (SPhPs), the physical mechanism behind the obtained ultra-high resolution is directly visualized to be the field enhancement by short-λ SPhPs at the superlensing condition. Our results pave the way to superlens-based infrared spectroscopic applications for revealing vibration information of dielectric samples.
[1] J. B. Pendry, Phys. Rev. Lett. 85, 3966 (2000).
[2] N. Fang, et al., Science 308, 534 (2005).
[3] T. Taubner, et al., Science 313, 1595 (2006).