Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 43: Organic Electronics and Photovoltaics IV (CPP jointly with DS, HL, O)
O 43.12: Vortrag
Mittwoch, 2. April 2014, 12:30–12:45, ZEU 260
Structural and electrical characterization of Hex-5T-Hex oligothiophene thin films during film formation — •Eduard Mikayelyan1, Linda Grodd1, Ullrich Pietsch1, Artem. V. Bakirov2, Maxim. A. Shcherbina2, Sergei N. Chvalun2, and Souren Grigorian1 — 1University of Siegen — 2Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences
Organic semiconductors are attractive for electronics due to the low cost processing methods and their high electrical conductivity. Thiophene based polymers and oligomers are demonstrating relatively high mobility, excellent luminescence properties which used for application in solar cells, radio-frequency identification, etc. [1, 2]. We have investigated the thiophene based oligomer Hex-5T-Hex. Structural characterization has been performed by grazing incidence x-ray diffraction (GIXD)method, in particular we probed the crystallite orientations in prefabricated thin films. The 3D structure of Hex-5T-Hex oligomer evaluated from the in-plane (010), (020) and (021) reflections is consistent with 2D structure suggested from 5T based oligomer self-assembled monolayer (SAM) [3]. Additionally, we found the (100) and (100)' reflections in out-of-plane direction characterizing two different stacking along thiophene backbone axis. In order to correlate the structural properties of oligothiophene thin films with the electrical characteristics both properties were probed simultaneous during film formation. This work was supported by BMBF, project number 05K10PSC.