Dresden 2014 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 65: Poster: Graphene (HL jointly with MA, O)

O 65.12: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Ion Implantation of Graphene - Toward IC Compatible Technologies — •H. Hofsäss¹, U. Bangert^2,3, W. Pierce², D. M. Kepaptsoglou³, Q Ramasse³, R Zan¹, M. H. Gass^3,4, J.A. van den Berg⁵, C. Boothroyd⁶, and J Amani¹ — ¹II. Physikalisches Institut, Georg-August-Universität Göttingen, Göettingen, Germany — ²School of Materials, The University of Manchester, Manchester, United Kingdom — ³SuperSTEM Laboratory, Daresbury, United Kingdom — ⁴AMEC, Walton House, 404 The Quadrant, Birchwood, United Kingdom — ⁵School of Computing, Science and Engineering, University of Salford, Salford, United Kingdom — ⁶Ernst Ruska-Centre for Microscopy and Spectroscopy, Juelich Research Centre, Juelich, Germany

Doping of graphene via ultra low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation of mass selected ions at energies of 20 - 30 eV and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.