Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 72: Competition for the Gerhard Ertl Young Investigator Award
O 72.1: Vortrag
Donnerstag, 3. April 2014, 10:30–11:00, PHY C 213
Fundamental aspects of germanium surface passivation by gas phase oxidation and liquid phase sulfidation — •Claudia Fleischmann1, Koen Schouteden2, Michel Houssa3, Sonja Sioncke4, Matthias Müller5, Chris Van Haesendonck2, Kristiaan Temst1, and Andre Vantomme1 — 1Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, BE-3001 Leuven, Belgium — 2Laboratorium voor Vaste-Stoffysica en Magnetisme, KU Leuven, Celestijnenlaan 200D, BE-3001 Leuven, Belgium — 3Laboratory of Semiconductor Physics, KU Leuven, Celestijnenlaan 200D, BE-3001 — 4imec, Kapeldreef 75, BE-3001, Leuven, Belgium — 5Physikalisch-Technische Bundesanstalt, Abbestrasse 2-12, D-10587 Berlin, Germany
To fully explore the potential germanium may offer for device application the effective and reliable passivation of defect states is essential (A.Dimoulas et al. 2007). In this contribution we will present two promising passivation schemes for Ge(100) surfaces: The in situ oxidation and ex situ sulfidation. By applying complementary analysis techniques we were able to investigate -at the atomic level- the adsorption mechanisms and surface properties of these O/Ge(100) and S/Ge(100) systems. We will show that both treatments result in discontinuous (sub-monolayer) self-limiting adsorbate layers. The adsorption geometry is comparable between both passivation schemes, and similarities are observed in view of passivation of intrinsic unoccupied defect states in the Ge band gap. The overall quality of the passivation layer appears to be limited by intrinsic and extrinsic constraints.