Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 81: Oxide and Insulator Surfaces III
O 81.5: Vortrag
Donnerstag, 3. April 2014, 17:00–17:15, PHY C 213
Ultra-thin zirconia films on Zr-alloys — •Joong Il Jake Choi1, Wernfried Mayr-Schmölzer1, Hao Li2, Günther Rupprechter2, Florian Mittendorfer1, Josef Redinger1, Ulrike Diebold1, and Michael Schmid1 — 1Institute of Applied Physics, Vienna University of Technology, Austria — 2Institute of Materials Chemistry, Vienna University of Technology, Austria
Zirconia ultra-thin films have been prepared by oxidation of Pt3Zr(0001) and showed a structure equivalent to (111) of cubic zirconia[1]. Following previous work, we have prepared ultra-thin zirconia by oxidation of a different alloy, Pd3Zr(0001), which resulted in a similar structure with a slightly different lattice parameter, 351.2 ± 0.4 pm. Unlike the oxide on Pt3Zr, where Zr of the oxide binds to Pt in the substrate, here the oxide binds to substrate Zr via oxygen. This causes stronger distortion of the oxide structure, i.e. a stronger buckling of Zr in the oxide. After additional oxidation of ZrO2/Pt3Zr, a different ultra-thin zirconia phase is observed. A preliminary structure model for this film is based on (113)-oriented cubic zirconia. 3D oxide clusters are also present after growing ultra-thin zirconia films. They occur at the step edges, and the density is higher on Pd3Zr. These clusters also appear on terraces after additional oxidation. XPS reveals different core level shifts of the oxide films, bulk, and oxide clusters.
[1] M. Antlanger, et. al., Phys. Rev. B 86, 035451 (2012)