Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 94: Graphene: Bi- and Multi-Layers (HL jointly with MA, O, TT)
O 94.3: Vortrag
Freitag, 4. April 2014, 10:00–10:15, POT 081
Transport in Dual Gated Encapsulated Bilayer Graphene — •Jonas Hesselmann1, Stephan Engels1,2, Bernat Terrés1,2, Kenji Watanabe3, Takashi Taniguchi3, and Christoph Stampfer1,2 — 1JARA-FIT and II. Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany — 2Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany — 3National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
Bilayer graphene (BLG) is a promising material which combines superior electronic properties like high charge carrier mobilities with the possibility of opening a band gap. The band gap can be induced by applying a perpendicular electric field resulting in a gap in the order of a few 10 meV. This makes BLG a possible candidate for future nanoelectronic applications. Here, we present the fabrication and low temperature (T=2K) transport measurements of dual gated BLG which is encapsulated in hexagonal boron nitride serving as an atomically flat gate dielectric. We show that the investigated devices exhibit mobilities of up to 80.000 cm2/Vs. Quantum Hall effect measurements show a distinct sequence of Hall plateaus together with a full symmetry breaking of the eightfold degenerate zero Landau level. By temperature dependent measurements we investigate the energy gap opening as function of a perpendicular electric field. We find that the transport via localized states at low temperatures exhibits a strong asymmetric behavior with respect to the sign of the applied electric field while the temperature activated transport is fully symmetric.