Dresden 2014 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 25: Focus Session: Electron Spin Qubits in Semiconductor Quantum Dots (organized by HL)
TT 25.1: Topical Talk
Montag, 31. März 2014, 15:00–15:30, POT 051
Single Charge Relaxation in a Silicon Double Quantum Dot — •Jason Petta — Department of Physics, Princeton University
Silicon has a weak spin-orbit interaction and can be isotopically purified resulting in an ultra-coherent environment for semiconductor qubits. I will describe recent measurements of single electron double quantum dots formed from undoped Si/SiGe quantum wells. Photon assisted tunneling is used to probe the energy level structure of the charge qubit, revealing the presence of low lying excited states. We measure the interdot charge relaxation time T1 of a single electron as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 µ s.