Dresden 2014 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 49: Spintronics (organized by MA)

TT 49.2: Vortrag

Dienstag, 1. April 2014, 14:00–14:15, HSZ 401

Antiferromagnetic spintronics — •I. Fina^{1, 2}, X. Marti^3,4,5, D. Yi³, C. Rayan-Serrao³, J. Liu³, J.-H. Chu³, S.J. Suresha³, J. Zelezny⁵, T. Jungwirth^5,6, J. Fontcuberta³, and R. Ramesh³ — ¹Max Planck Institute of Microstructure Physics, Weinberg 2, Halle Germany — ²Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, 08193 Bellaterra, Spain — ³Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA — ⁴Dept. Condensed Matter Physics Charles University in Prague — ⁵Institute of Physics ASCR, v.v.i., Cukrovarnick 10, 162 53 Praha 6, Czech Republic — ⁶School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

Magnetic semiconductors entwine two of the most successful concepts in both fundamental physics and industrial applications. Recently antiferromagnets have been proposed as new and atractive material systems. Antiferromagnetic spintronics have been demonstrated by the fabrication of tunnel devices, atomic-size proof-of concepts, even devices without auxiliary ferromagnetic layers. Here we present the control of the electrical conductivity of an antiferromagnetic semiconductor by manipulating the magnetic state of a contiguous ferromagnetic.

We present an oxide-based fully epitaxial heterostructure, its structural characterization and the electrical measurements showing a direct link between state of the ferromagnetic gate and ohmic resistance of the semiconductor, even displaying distinct remnant resistance states. We will also show that distinct remnant states can also been obtained at room temperature, promising potential applicability.