Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
T: Fachverband Teilchenphysik
T 39: Halbleiter 2
T 39.6: Vortrag
Montag, 24. März 2014, 18:00–18:15, P109a
Characterization of irradiated epitaxial silicon sensors — •Matteo Centis Vignali1, Doris Eckstein2, Thomas Eichhorn2, Erika Garutti1, Alexandra Junkes1, and Georg Steinbrück1 — 1Institut für Experimentalphysik, Universität Hamburg — 2Deutsches Elektronen Synchrotron, DESY
The need of precision vertexing in the radiation environment of high luminosity colliders demands the development of solid state detectors that can withstand unprecedented fluences. While the innermost layers of such detectors will probably be built using alternative materials and configurations, the planar silicon technology is likely to be used to construct the outer layers due to its reliability and cost effectiveness. Thin epitaxial silicon sensors have shown a minor degradation of the charge collection efficiency with irradiation, when compared to thicker devices. In this talk the results of the characterization of epitaxial silicon diodes with a thickness of 100 µm irradiated up to a fluence of 1.3 1016 neqcm−2 using the techniques of IV and CV are shown, as well as measurements of charge collection done using a β source. Silicon strip detectors with the same characteristics of the diodes have been characterized in a test beam campaign at DESY. Preliminary results of the test beam activity are shown in the talk.