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DS: Fachverband Dünne Schichten

DS 16: Atomic Layer Deposition

DS 16.2: Vortrag

Dienstag, 17. März 2015, 12:30–12:45, H 0111

Atomic Layer Deposition and characterization of Ga-doped Sb2Te3 thin films at low temperatures. — •Christoph Wiegand1, Monika Rusek2, Johannes Gooth1, Robert Zierold1, Stephan Schulz2, and Kornelius Nielsch11Institut für Nanostruktur- und Festkörperphysik, Universität Hamburg — 2Institut für Anorganische Chemie, Universität Duisburg-Essen

Semiconductors of the V2VI3-type have recently become in the focus of a new type of material class, called topological insulators (TIs). TIs are bulk insulators that offer time-reversal symmetry protected highly conductive surface states.

We demonstrate the growth of antimony telluride and gallium telluride thin films via ALD at temperatures below 100 C, which is relatively low compared to CVD or comparable techniques. In supercycle approach depicted GaxSb2−xTe3 compounds and nanolaminates have been synthesized and have led to an understanding of the crystallization behavior of Sb2Te3 in dependence of the Ga-content and the underlying substrate. We were able to determine the minimum Ga-content needed for single-crystalline growth of GaxSb2−xTe3 thin films. Moreover, actual studies are performed on the measurement of the electrical transport properties of these GaxSb2−xTe3 films using a micron-sized hall-bar device fabricated by standard photolithography and lift-off processing.

The authors acknowledge financial support from the DFG through the SPP 1666 project "Topological Insulators".

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DPG-Physik > DPG-Verhandlungen > 2015 > Berlin