Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 16: Atomic Layer Deposition
DS 16.3: Vortrag
Dienstag, 17. März 2015, 12:45–13:00, H 0111
Encapsulation of Silver Nanowires in Transparent Conductive Oxides by Atomic Layer Deposition — •Manuela Göbelt1, Ralf Keding1, Björn Hoffmann1, Sebastian Schmitt1, Sara Jäckle1, Michael Latzel2, and Silke Christiansen1,3 — 1Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1/Bau 24, Erlangen, Germany — 2Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Institute of Optics, Information and Photonics, Staudtstr. 7/B2, Erlangen, Germany — 33Helmholtz Center Berlin for Energy and Materials, Hahn-Meitner-Platz 1, Berlin, Germany
Aluminum doped ZnO (AZO) has become a promising material for transparent electrodes due to its high abundance and its suitable electrical and optical properties. However, the sheet resistance of AZO is rather high to adapt as transparent electrode. Silver nanowire (AgNW) networks encapsulated in an AZO layer hold the promise to significantly decrease its resistivity, but the encapsulation of high aspect ratio structures is rather difficult to achieve by conventional deposition techniques. Atomic layer deposition (ALD) is a useful technique to deposit homogenous and uniform layers e.g. on nanostructures used in third generation solar cell concepts. This deposition technique is based on a self-limiting reaction mechanism, which guarantees excellent film deposition conformity and atomic-scale thickness control. The encapsulation of AgNWs by ALD is shown and optimization routes for its conductivity and transparency are pointed out. Furthermore, the application of AgNW/AZO-TCOs for silicon solar cells is discussed.