Berlin 2015 – wissenschaftliches Programm
DS 2.5: Vortrag
Montag, 16. März 2015, 10:30–10:45, H 0111
Crystallization of Ge nanoparticles in ZrO2-based dielectrics for electrical applications. — •David Lehninger1, Larysa Khomenkova2, Frank Schneider1, Cameliu Himcinschi3, Volker Klemm4, David Rafaja4, and Johannes Heitmann1 — 1Institut für Angewandte Physik, TU Bergakademie Freiberg, D-09596 Freiberg — 2Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kiev, Ukraine — 3Institut für Theoretische Physik, TU Bergakademie Freiberg, D-09596 Freiberg — 4Institut für Werkstoffwissenschaft, TU Bergakademie Freiberg, D-09596 Freiberg
Crystallization of Ge was studied in high-k ZrO2 and TaZrOx host materials using Ge3.6ZrO2/ZrO2 or GeTaZrOx/TaZrOx superlattices, sputtered on Si wafers which were either covered by a SiO2 or Si3N4 starting layer. In order to achieve a better understanding of the Ge-NCs-high-k interface, the formation of Ge-NCs was analyzed by different analytical methods for different annealing temperature. In pure ZrO2, elongated non-spherical Ge-NCs with insufficient control of shape, size, and spatial distribution were observed on wafers covered by SiO2. A Si3N4 starting layer led to formation of multilayer structures with thin Ge films within the ZrO2 matrix. Using TaZrOx as matrix, Ge-NCs with spherical shape and well-defined size were formed in amorphous TaZrOx. In this system, charge trapping phenomena were investigated using MIS structures with single and double layer storage nodes. A memory window of up to 5 V together with a programming-to-flatband-voltage slope of near 1 could be observed.