Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 2: Thin Film Characterisation I: Structure Analysis and Composition

DS 2.6: Vortrag

Montag, 16. März 2015, 10:45–11:00, H 0111

First Synthesis Approach of Layered ZrSe₂ and New Misfit Layer Compounds (PbSe)_1+δ(ZrSe₂)_n Using Modulated Elemental Reactants — •Benjamin Eickmeier¹, Matti Alemayehu², Robert Zierold¹, Matthias Falmbigl², Sage Bauers², Johannes Gooth¹, Torben Dankwort³, Julie Chouinard², Carmen Voigt⁴, Carsten Ronning⁴, David C Johnson², and Kornelius Nielsch¹ — ¹Universität Hamburg, Hamburg, Germany — ²University of Oregon, Eugene, USA — ³Christian-Albrechts-Universität zu Kiel, Kiel, Germany — ⁴Universität Jena, Jena, Germany

A first synthesis approach of the layered dichalcogenide ZrSe₂ and a new family of misfit layer compounds (PbSe)_1+δ(ZrSe₂)_n (n=1,2,3) using the physical vapor deposition technique of modulated elemental reactants is reported. Thin films of about 30 nm were deposited onto Si and SiO₂ and characterized with XRD, XRR, and TEM. Composition data was acquired with electron probe microanalysis. These misfit layer compounds are metastable systems and consist of an intergrowth structure between one rock salt sublattice PbSe and n dichalcogenide sublattices ZrSe₂, which are alternately stacked upon each other. In the temperature range of 120–200 K hopping transport was observed on the presumable (PbSe)_1+δ(ZrSe₂)₁, due to crystalline grains embedded in an amorphous matrix. Previous studies of misfit layer compounds report an unusual decrease up to six times of the in-plane thermal conductivity compared to single dichalcogenides. This trend makes those systems promising alternatives for e.g. thermoelectric applications.