Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 32: Spins in organics
DS 32.2: Vortrag
Mittwoch, 18. März 2015, 16:45–17:00, H 0111
Peculiar Transport Properties of Nanosized Vertical Organic Spin-Valves — •Robert Göckeritz1, Nico Homonnay1, Tim Richter1, Alexander Müller1, Bodo Fuhrmann2, and Georg Schmidt1,2 — 1Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale), Germany — 2Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale), Germany
Organic spin-valves are seen as promising candidates for future spintronic devices based on organic semiconductors. So far most publications report on devices with lateral dimensions of more than 100 micrometer. We present a fabrication process for vertical organic spin-valve devices which offers the possibility to continuously scale down organic spin-valves down to the 100 nm regime. The process uses oxide windows as lateral limitations of the devices and shadow masks during deposition of the active layers. Samples of a LSMO/Alq3/MgO/Co layer stack with lateral dimensions between 100 micrometer and 500 nm have been fabricated and characterized. Upon downscaling we observed a non-linear behavior of the resistance area product and furthermore for similar nanosized devices a large variation of the magnetoresistance between +90% and -170%. These results indicate that the transport is merely determined by pinholes with a certain statistical distribution and that transport and magnetoresistance are mainly dominated by tunneling at the pinhole sites where the organic layer is thin enough.