Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 34: Focussed Session: Oxide semiconductors I (joint session with HL)
DS 34.4: Vortrag
Donnerstag, 19. März 2015, 10:30–10:45, H 2032
Schottky contacts and pn-heterojunctions on heteroepitaxial In2O3 thin films grown by pulsed laser deposition — •Daniel Splith, Florian Schmidt, Steffen Lanzinger, Stefan Müller, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany
Oxide semiconductors like In2O3 are promising materials for a new generation of transparent electronic devices. While the properties of highly tin-doped In2O3 (ITO) for use as a transparent conductive oxide (TCO) are well investigated, interest in the semiconducting properties of In2O3 for the investigation of material properties and application in devices arose recently. In order to create devices like diodes or field-effect transistors, the creation of a space charge region is required, which can be done either by a Schottky contact (SC) or a pn-junction.
In this contribution we discuss the fabrication of rectifying contacts based on SCs [1] and pn-heterojunctions with an amorphous p-type oxide like NiO or ZnCo2O4 [2]. To optimize the performance of the rectifying contacts different approaches were used: By introducing a Mg-doped In2O3 layer, the reverse current was decreased by several orders of magnitude since Mg acts as an acceptor in In2O3 and therefore increases the width of the space charge region. Also, a tin doped back contact layer was employed in order to decrease the series resistance of the contacts. Further, different substrates were used to investigate the influence of the crystal quality on the rectifying properties.
H. von Wenckstern et al., APL Mat. 2, 046104 (2014)
F.-L. Schein et al., Appl. Phys. Lett. 104, 022104 (2014)