Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 34: Focussed Session: Oxide semiconductors I (joint session with HL)
DS 34.6: Hauptvortrag
Donnerstag, 19. März 2015, 11:30–12:00, H 2032
BaSnO3; The next generation of transparent conducting oxide? — •David Scanlon — Department of Chemistry, University College London, UK — Diamond Light Source Ltd., Harwell, UK.
La-doped cubic perovskite BaSnO3 has been reported to possess electron mobilities as high as 320 cm2 V−1 s−1 for carrier concentrations of 8×1019 cm−3, comparable to the very best transparent conducting oxides (TCOs). In this presentation we will examine the electronic structure and defect chemistry of BaSnO3, and use this information to explain why La-doped BaSnO3 possesses all the qualities needed to be the next generation n−type TCO.