Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Poster Session I
DS 36.16: Poster
Donnerstag, 19. März 2015, 09:30–12:00, Poster A
TaO-based Memristive Tunnel Junctions and their Integration to neuromorphic Circuits — •Stefan Niehörster1, Savio Fabretti1, Lauritz Schnatmann1, Alessia Niesen1, Markus Schäfers1, Karsten Rott1, Andy Thomas1, and Elisabetta Chicca2 — 1Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany — 2Neuromorphic Behaving Systems, CITEC, Bielefeld University, Germany
We produced memristive tunnel junctions by magnetron sputtering. They consist of a 2/3nm TaO barrier between a noble Pd electrode and an ignoble Ta electrode to generate two different interfaces. The barrier was fabricated by reactive sputtering of a Ta target in an atmosphere of 1:3 argon and oxygen. This improved the memristive switching to a value of more than 200% compared to 120% in former series with a plasma oxidized thin Ta film as barrier. These devices also can change their resistance continuously, so we are able to generate more than just two states, which is a fundamental condition for a synaptical behavior.
We succeeded in placing our working memristive devices on stated electrodes of a neuromorphic chip to take over the part of artificial synapses. To contact the devices to the chip, we had to overcome several obstacles like a 2µm thick protection layer and a large roughness, which results from the focused ion beam etching.