Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.8: Poster

Donnerstag, 19. März 2015, 09:30–12:00, Poster A

Chalcogenide Superlattices (CSL) for Energy Efficient Data Storage by Magnetron Sputtering — •Felix Lange¹, Jamo Momand², Henning Hollermann¹, Juri Banchewski¹, Stefan Jakobs¹, Andrea Redaelli³, Enrico Varesi³, Bart J. Kooi², and Matthias Wuttig^1,4 — ¹1.Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — ²Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands — ³Micron Semiconductor Italia, Process R&D, Agrate Brianza, Italy — ⁴JARA - Fundamentals of Information Technology, RWTH Aachen University, 52056 Aachen, Germany

Phase change materials (PCM), as a sub-group of the chalcogenides, have already been extensively used in rewritable optical data storage (e.g. CD-RW). Since they combine scalability and fast switching speed with low power consumption, they are nowadays traded as promising candidates for next-generation memory, most suitable for mobile applications. Only recently it has been proposed, that the performance could be even enhanced, by using superlattices of GeTe and Sb₂Te₃ instead of just bulk (Sb₂Te₃)_x(GeTe)_y (GST). It is argued that in this case, the change in electrical resistivity would be realized by a change in atomic coordination of Germanium at the interfaces only. Here we explore the feasibility to grow highly textured thin alternating layers of GeTe and Sb₂Te₃ using DC magnetron sputter deposition by using X-ray diffraction and transmission electron microscopy (TEM) techniques.