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Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Phase change/ resistive switching

Donnerstag, 19. März 2015, 15:00–18:45, H 0111

15:00 DS 38.1 Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films — •Xinxing Sun, Erik Thelander, Jürgen W. Gerlach, and Bernd Rauschenbach
15:15 DS 38.2 Growth of Germanium Telluride Thin Films on Passivated Silicon Surfaces by Molecular Beam Epitaxy — •Rui Ning Wang, Jos Boschker, Raffaella Calarco, Jamo Momand, and Bart Kooi
15:30 DS 38.3 Epitaxial and textured Ge-Sb-Te phase-change thin films investigated by Cs-corrected STEM — •Ulrich Roß, Andriy Lotnyk, Erik Thelander, and Bernd Rauschenbach
15:45 DS 38.4 Optical and structural dynamics of the photoinduced phase transition of GST — •Lutz Waldecker, Timothy Miller, Roman Bertoni, Simon Wall, and Ralph Ernstorfer
16:00 DS 38.5 Static and dynamic THz spectroscopy of epitaxially grown GeTe-Sb2Te3 alloys — •Valeria Bragaglia, Karsten Holldack, and Raffaella Calarco
16:15 DS 38.6 Memristive Hebbian Plasticity: Device requirements for the emulation of Hebbian plasticity based on memristive devices — •Martin Ziegler, Mirko Hansen, Marina Ignatov, Thorsten Bartsch, and Hermann Kohlstedt
16:30 DS 38.7 Memristive Tunnel Junctions — •Mirko Hansen, Martin Ziegler, Thomas Mussenbrock, Sven Dirkmann, and Hermann Kohlstedt
16:45 DS 38.8 Emulation of neuronal functionality by using a VO2-based oscillator circuit — •Marina Ignatov, Martin Ziegler, Mirko Hansen, Adrian Petraru, and Hermann Kohlstedt
  17:00 15 min. break.
17:15 DS 38.9 Effect of oxygen engineering and doping on resistive switching in HfO2 based RRAM devices grown by MBE — •S.U. Sharath, Jose Kurian, Erwin Hildebrandt, Philipp Komissinskiy, Thomas Bertaud, Christian Walczyk, Pauline Calka, Thomas Schroeder, and Lambert Alff
17:30 DS 38.10 BiFeO3-based resistive switching cells with flexible rectifying contact — •Tiangui You, Nan Du, Stefan Slesazeck, Thomas Mikolajick, Guodong Li, Danilo Bürger, Ilona Skorupa, Hartmut Stöcker, Barbara Abendroth, Andreas Beyer, Kerstin Volz, Oliver G. Schmidt, and Heidemarie Schmidt
17:45 DS 38.11 Reversible Changes Induced by Liquid Electrolyte Gating in the WO3 Electronic Structure — •Carlos E. ViolBarbosa, Julie Karel, Simone G. Altendorf, Janos Kiss, Yuki Utsumi, Mahesh G. Samant, Liu Hao Tjeng, Claudia Felser, and Stuart S. P. Parkin
18:00 DS 38.12 Resistive switching of polycrystalline, multiferroic YMnO3 thin films — •Agnieszka Bogusz, Sławomir Prucnal, Daniel Blaschke, Ilona Skorupa, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt
18:15 DS 38.13 Kinetic Monte-Carlo simulations of resistive switching in silver doped titanium dioxide thin filmsSven Dirkmann, Jan Trieschmann, Mirko Hansen, Martin Ziegler, Hermann Kohlstedt, and •Thomas Mussenbrock
18:30 DS 38.14 Tailoring the electrical properties of a TiO2 layer by ion-beam irradiation for memristive applications — •Daniel Blaschke, Agnieszka Bogusz, René Hübner, Franziska Nierobisch, Vikas Rana, Andrea Scholz, Sibylle Gemming, and Peter Zahn
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DPG-Physik > DPG-Verhandlungen > 2015 > Berlin