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Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 38: Phase change/ resistive switching

DS 38.14: Talk

Thursday, March 19, 2015, 18:30–18:45, H 0111

Tailoring the electrical properties of a TiO2 layer by ion-beam irradiation for memristive applications — •Daniel Blaschke1, Agnieszka Bogusz1, René Hübner1, Franziska Nierobisch1, Vikas Rana3, Andrea Scholz1, Sibylle Gemming1,2, and Peter Zahn11Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf — 2Chair of Scale-bridging Materials Modeling, Physics Departement, TU Chemnitz — 3Peter Grünberg Institut, Forschungszentrum Jülich

Reactively sputtered TiO2 thin films on Pt/Ti/SiO2/Si substrates were irradiated with low energy Ar+ ions of different energies to create surface or bulk modifications in the material. Furthermore, the fluence was varied to optimize the level of the modifications, which are e.g. amorphization, surface smoothing, and preferential sputtering of oxygen. These effects were detected by TEM, AFM and supported by TRIDYN simulations, respectively. The impact of these changes on the electrical properties of the TiO2 layers was monitored by I-V and C-V measurements in top-bottom geometry with Pt, as well as Ti/Pt top contacts. The results indicate a transition from a Schottky-like behavior of the Pt/TiO2 interface to an ohmic one with increasing fluence, which is very similar to the behavior of a Ti/TiO2 interface. Furthermore, the capacity of the complete MIM stack increases with fluence, which points to a reduced effective thickness of the dielectric TiO2 layer after irradiation.

The project is funded by the Initiative and Networking Fund of the Helmholtz Association (Virtual Institute Memriox, VH-VI-422).

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