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DS: Fachverband Dünne Schichten

DS 39: Poster Session II

DS 39.25: Poster

Thursday, March 19, 2015, 16:00–18:30, Poster F

Enhanced Infrared Spectroscopy of Organic Field Effect Transistor (OFET) Materials for an In-Line Production Control — •Michael Sendner1,2, Anton Hasenkampf1, and Annemarie Pucci1,2,31Kirchhoff-Institut für Physik, Universität Heidelberg — 2InnovationLab GmbH, Heidelberg — 3Centre for Advanced Materials, Universität Heidelberg

For a mass production of flexible organic devices, such as Organic Field Effect Transistors (OFETs), printing in a roll-to-roll-process becomes of increasing importance. For the realization of an in-line production control a fast characterization of the organic semiconductors is needed. Infrared spectroscopy enables the possibility of controlling contaminations of the organic semiconductors and at the same time the determination of film thickness of the used materials. A reduction of the measurement time is possible if one uses metal nanostructures which enhance the vibrational signals of the materials due to collectively excited conduction electrons (plasmons). We show that metal nanostructures are a possible tool for in-line control of organic semiconductors on a flexible organic substrate by means of enhancement and measurement time.

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